Experts expect a breakthrough in the market. Scientists of the Novosibirsk Institute of Semiconductor Physics RAS work on a new generation of flash memory. The new device will run a thousand times faster and a million times more reliable than current flash drives.

This memory will consume less energy, and respectively will hold a charge much longer. It will also reduce the amount of battery and the weight of the unit. It is noted that the new flash memory will not be more expensive than the available ones. The new technology will be introduced no earlier than after 2020. To date, this type of memory is not produced in Russia.

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