The new MRAM "bury" flash memory

IBM and Samsung announced the creation of the technological process of production of non-volatile memory, which operates at 100 thousand times faster than NAND flash memory and has a virtually unlimited resource of read and write cycles. The company is developing magnetoresistive (MRAM) memory of the next generation with the use of STT (spin-transfer torque) technology, which will create a more efficient memory chips for small-capacity sensors.

Internet of Things, handheld devices and mobile technology, which is now used in flash memory NAND. If the NAND flash memory required to record the data one millisecond , with MRAM this procedure takes only 10 nanoseconds. In the foreseeable future,  STT MRAM unlikely will replace the DRAM chips, but the built-in flash memory, it is quite capable to press.

“Открытые системы” 

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